Chinese PV module maker Longi has announced it has achieved a power conversion efficiency of 25.47% for a gallium-doped, p-type heterojunction (HJT) solar cell based on an M6 wafer.
The manufacturer said the result was confirmed by Germany's Institute for Solar Energy Research Hamelin (ISFH).
“Longi’s R&D team has developed a p-type wafer processing solution for HJT cells and combined it with interface passivation technology to achieve an open-circuit voltage of 747.6mV for p-type HJT cells,” the manufacturer stated. “It should be noted that the processing of the low-cost p-HJT cell solution applied in this record has not yet been fully optimized and Longi is convinced that this technology route still has great potential for further development.”
Popular content
Longi had achieved an efficiency of 25.19% for its p-type TOPCon solar cell in July and, a month earlier, a 25.21% efficiency for an n-type TOPCon device. It has also reached a 26.3% efficiency for its n-type HJT cell.
This content is protected by copyright and may not be reused. If you want to cooperate with us and would like to reuse some of our content, please contact: editors@pv-magazine.com.
9 comments
By submitting this form you agree to pv magazine using your data for the purposes of publishing your comment.
Your personal data will only be disclosed or otherwise transmitted to third parties for the purposes of spam filtering or if this is necessary for technical maintenance of the website. Any other transfer to third parties will not take place unless this is justified on the basis of applicable data protection regulations or if pv magazine is legally obliged to do so.
You may revoke this consent at any time with effect for the future, in which case your personal data will be deleted immediately. Otherwise, your data will be deleted if pv magazine has processed your request or the purpose of data storage is fulfilled.
Further information on data privacy can be found in our Data Protection Policy.