The Chinese manufacturer introduced new PV modules this weekend at the SNEC solar exhibition in Shanghai.
Huawei said the Guangzhou Intellectual Property Court in China has ruled in its favor in a patent dispute with its Israeli rival.
Polysilicon prices continued to soar this week. Prices have been rising across the PV supply chain since mid-July due to recent accidents at two Chinese polysilicon factories, according to EnergyTrend.
pv magazine editor Pilar Sánchez Molina recalls news from the PV sector of ten years ago as part of a new series. The insights offered will not only bring back memories for the pioneers of that exciting, challenging period but may also offer an idea of where we could be in 2030.
But Israeli inverter company Solaredge and Indian engineering, procurement and construction services provider Sterling and Wilson have both offered hope of a recovery in Europe as Chinese glass producer Xinyi said it kept the furnaces going throughout the worst of the pandemic.
In 2016, Huaneng Hainan Power and Huawei jointly digitalized the Dongfang solar power plant in Hainan, China. As the first solar PV project to be digitalized, it is worth taking a look back to see how the new technology has actually bolstered performance.
The Japanese electronics giant said a partnership with GS-Solar will not materialize and it will continue producing its modules in Japan and Malaysia while seeking other cooperation opportunities.
Two solar glass makers kicked off the week with new deals and solid earnings reports while the Chinese government revealed it may issue bonds to fund clean energy incentives.
The Chinese manufacturer has completed the first, 1.5 GW phase of a 10 GW expansion plan. It will deploy another 4 GW phase by the end of this year at two new facilities in China’s Jiangsu province.
The mechanisms behind light-elevated temperature-induced degradation are still not fully understood, but it is known to cause significant performance losses for modules in the field. Scientists in China are investigating the causes of the phenomenon, and are currently focused on the surface of the materials and the interfaces between the silicon and passivation layers.
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