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gallium arsenide (InGaAs)

Single-junction III-V solar cell based on spalled GaAs substrate achieves 26.9% efficiency

NREL researchers used acoustically spalled gallium arsenide substrate that reportedly reduces electrical shunting, resulting in potentially lower manufacturing costs. The cell achieved an open-circuit voltage of 1.061 V, a short-circuit current density of 29.9 mA/cm2, and a fill factor of 84.9%.

Germanium use reduced in GaAs solar cells by new two-step process

Researchers from Canada have unveiled a new germanium deposition process which is said to eliminate threading dislocations and be significantly cheaper than previous approaches. The scientists say their technique creates nanovoids on the surface of the germanium layer which can attract and annihilate undesirable dislocations.

Fraunhofer ISE displays colored solar car roof at auto trade fair

An increasing number of carmakers and research institutes are developing concepts that combine e-mobility and solar. Thus far, range additions from in-car panels of between 10 and 60km are the limit of innovation. The Fraunhofer roof is tinted with a color that hides the cells but lets through most of the light.

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