Single-junction III-V solar cell based on spalled GaAs substrate achieves 26.9% efficiency
NREL researchers used acoustically spalled gallium arsenide substrate that reportedly reduces electrical shunting, resulting in potentially lower manufacturing costs. The cell achieved an open-circuit voltage of 1.061 V, a short-circuit current density of 29.9 mA/cm2, and a fill factor of 84.9%.
Nothing can bring down the price of III-V solar cells – just add germanium
A research paper from scientists at the U.S. National Renewable Energy Laboratory outlines a new approach to the production of gallium arsenide based cells. The approach, termed ‘germanium on nothing’, could enable the cost effective, high volume production of PV cells based on III-V materials such as gallium arsenide.
