The cell, which looks externally like a device with a two-terminal architecture, was built with III-V semiconductor layers that were connected to the silicon sub-cell on the atomic level. The cell may be used in electrically powered aircraft and drones.
Finnish scientists have developed a four-junction solar cell based on III-V semiconductor materials that is said to be able to achieve a wide spectral coverage. The cell was monolithically grown on gallium arsenide by molecular beam epitaxy (MBE).
Scientists in Canada have discovered a promising technique for the production of gallium-arsenide solar cells. Growing these cells directly onto a silicon substrate is a promising strategy that could cut out some of the technology’s exorbitant production costs. And by making that silicon porous, scientists may have taken a step toward producing high-performance III-V solar cells at a significantly lower cost.
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