The cell, which looks externally like a device with a two-terminal architecture, was built with III-V semiconductor layers that were connected to the silicon sub-cell on the atomic level. The cell may be used in electrically powered aircraft and drones.
Finnish scientists have developed a four-junction solar cell based on III-V semiconductor materials that is said to be able to achieve a wide spectral coverage. The cell was monolithically grown on gallium arsenide by molecular beam epitaxy (MBE).
The new results mark an improvement on the institute’s previous 24.3% efficiency record. The III-V tandem solar cell is directly grown on silicon.
Swiss startup Insolight has raised €4.6 million to bring its concentrating PV module technology to commercial production. The panels have a claimed efficiency of 30% and power output of 160 W. Originally conceived for rootop solar, the product is now being recommended as an interesting option for agrivoltaic projects.
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