GCL-Poly creates JV to build new 20 GW mono ingot fab in China


GCL-Poly, one of the leading multicrystalline (multi) and monocrystalline (mono) wafer producers in the world, has this week signed a joint venture (JV) agreement with a Chinese municipal government to build a 20 GW mono ingot production facility in Qujing, China.

The JV is to be set up with Qujing Municipal Government and will require an investment of RMB 9 billion (US$1.4 billion). The project will be created in two, 10 GW phases and located in Qujing’s Economic and Technological Development Zone, or the QETDZ for short.

The site will not only produce mono ingots, but will also host GCL-Poly R&D efforts.

The next steps will be for GCL-Poly to work closely with the Qujing government to identify a suitable site for the fab, with the newly formed JV responsible for securing land use rights, and obtaining all necessary permits to build and operate the facility. Around 20% of staff to be employed onsite must be drawn from the local Qujing Municipal area, the contract states.

On the technical front, GCL-Poly says that its intention is for the JV to use CCZ constant czochralski monosilicon technology at the new fab. This technology was leveraged from GCL-Poly’s purchase of part of SunEdison’s manufacturing business.

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GCL-Poly stated at the time that its intention is to “fully satisfy the demand for CCZ constant czochralski monosilicon and N-type monosilicon materials, and surpass the current quality level, while achieving the lowest cost over the world.”

GCL-Poly reported an 8% increase in revenue in 2017 and began construction in December last year on a new 20,000 MT polysilicon fab in Xinjiang – a capacity that is planned to increase to 40,000 MT in due course, as GCL-Poly seeks to relocate existing capacities from its Xuzhou facility.

The company’s wafer production capacity as of 2017 was 23,902 MW, which was a 37.9% increase year-on-year.

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