Spire produces CPV solar cell with 42.3 percent efficiency


The 0.97cm(2) triple junction, gallium arsenide cell, measured by the U.S. Department of Energy’s National Renewable Energy Laboratory (NREL), was found to have a peak efficiency of 42.3 percent at 406 suns AM1.5D, 25C (42.2 percent at 500 suns).

Edward D. Gagnon, general manager of Spire Semiconductor, LLC, stated: "In early 2009, Spire Semiconductor was awarded an NREL Photovoltaic (PV) Incubator subcontract to develop a high efficiency triple junction, gallium arsenide (GaAs) cell. In less than 18 months, we were able to validate and incorporate our new concept into a production-ready cell design with world-record efficiency.

“This higher efficiency, next generation GaAs CPV cell platform is now available commercially to the concentrator systems providers."