The 0.97cm(2) triple junction, gallium arsenide cell, measured by the U.S. Department of Energy's National Renewable Energy Laboratory (NREL), was found to have a peak efficiency of 42.3 percent at 406 suns AM1.5D, 25C (42.2 percent at 500 suns).
Edward D. Gagnon, general manager of Spire Semiconductor, LLC, stated: "In early 2009, Spire Semiconductor was awarded an NREL Photovoltaic (PV) Incubator subcontract to develop a high efficiency triple junction, gallium arsenide (GaAs) cell. In less than 18 months, we were able to validate and incorporate our new concept into a production-ready cell design with world-record efficiency.
This higher efficiency, next generation GaAs CPV cell platform is now available commercially to the concentrator systems providers."
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