The 0.97cm(2) triple junction, gallium arsenide cell, measured by the U.S. Department of Energy's National Renewable Energy Laboratory (NREL), was found to have a peak efficiency of 42.3 percent at 406 suns AM1.5D, 25C (42.2 percent at 500 suns).
Edward D. Gagnon, general manager of Spire Semiconductor, LLC, stated: "In early 2009, Spire Semiconductor was awarded an NREL Photovoltaic (PV) Incubator subcontract to develop a high efficiency triple junction, gallium arsenide (GaAs) cell. In less than 18 months, we were able to validate and incorporate our new concept into a production-ready cell design with world-record efficiency.
This higher efficiency, next generation GaAs CPV cell platform is now available commercially to the concentrator systems providers."
Popular content
This content is protected by copyright and may not be reused. If you want to cooperate with us and would like to reuse some of our content, please contact: editors@pv-magazine.com.
Share
Becky Beetz
By submitting this form you agree to pv magazine using your data for the purposes of publishing your comment.
Your personal data will only be disclosed or otherwise transmitted to third parties for the purposes of spam filtering or if this is necessary for technical maintenance of the website. Any other transfer to third parties will not take place unless this is justified on the basis of applicable data protection regulations or if pv magazine is legally obliged to do so.
You may revoke this consent at any time with effect for the future, in which case your personal data will be deleted immediately. Otherwise, your data will be deleted if pv magazine has processed your request or the purpose of data storage is fulfilled.
Further information on data privacy can be found in our Data Protection Policy.