Fraunhofer ISE achieves 40% efficiency for indoor III-V solar cell
The PV device is based on a indium gallium phosphide absorber with an energy bandgap of 1.9 eV. It is intended for use in autonomous Internet of Things (IoT) applications that operate indoors without an external wired power supply.
The impact of temperature on III-V solar cells
Scientists in Spain have analyzed the impact of temperature and spectral conditions on III-V solar cells employed in concentrator photovoltaic modules. They claim to have assessed the cell behavior under unprecedented operating condition.
III–V triple-junction solar cell with mask, plate front metallization achieves 31.6 % efficiency
Fraunhofer ISE researchers utilized a new front metallization technique to produce a III-V gallium arsenide solar cell. For mask and plate front metallization, they used a new two-step printing scheme that reportedly allows for the realization of extremely narrow mask openings.
Russian scientists unveil new manufacturing process for III-V solar cells
Researchers have integrated A3B5 semiconductors on a silicon substrate in a prototype solar cell and claim the technique could enable the production of III-V solar cells with conversion efficiencies of around 40%.
