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III-V cell

Fraunhofer ISE achieves 35.9% efficiency for III-V triple-junction solar cell based on silicon

The cell, which looks externally like a device with a two-terminal architecture, was built with III-V semiconductor layers that were connected to the silicon sub-cell on the atomic level. The cell may be used in electrically powered aircraft and drones.

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III-V multi-junction solar cell with 39% efficiency

Finnish scientists have developed a four-junction solar cell based on III-V semiconductor materials that is said to be able to achieve a wide spectral coverage. The cell was monolithically grown on gallium arsenide by molecular beam epitaxy (MBE).

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Gallium arsenide phosphide tandem solar cell with 25.0% efficiency

The demonstrated device, according to the academics, is built with interfaces between the active cell layers that improve the top cell carrier collection. The cell was built with texturing and a hydrogenated amorphous silicon (a-Si:H) passivation of a silicon back surface.

Fraunhofer ISE claims 25.9% efficiency for III-V tandem solar cell

The new results mark an improvement on the institute’s previous 24.3% efficiency record. The III-V tandem solar cell is directly grown on silicon.

Solar cells from space are on the way

A team at the U.S. National Renewable Energy Laboratory has come up with a new process that would reduce the production cost of highly expensive – and highly efficient – gallium arsenide cells.

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