The cell, which looks externally like a device with a two-terminal architecture, was built with III-V semiconductor layers that were connected to the silicon sub-cell on the atomic level. The cell may be used in electrically powered aircraft and drones.
Finnish scientists have developed a four-junction solar cell based on III-V semiconductor materials that is said to be able to achieve a wide spectral coverage. The cell was monolithically grown on gallium arsenide by molecular beam epitaxy (MBE).
The demonstrated device, according to the academics, is built with interfaces between the active cell layers that improve the top cell carrier collection. The cell was built with texturing and a hydrogenated amorphous silicon (a-Si:H) passivation of a silicon back surface.
The new results mark an improvement on the institute’s previous 24.3% efficiency record. The III-V tandem solar cell is directly grown on silicon.
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