kesterite solar cell

The cell was fabricated using a new interfacial phase equilibrium strategy that suppressed uncontrollable metal ion migration. The device achieved an exceptionally high open-circuit voltage of over 600 mV at a bandgap of 1.10 eV.

The efficiency result was confirmed by the U.S. National Renewable Energy Laboratory. The module was fabricated with 13.4%-efficient kesterite cells designed with high film porosity and uniformity.

University of New South Wales (UNSW) researchers have set a new energy efficiency record for kesterite solar cells, a technology with potential to enhance silicon-based PV systems.

Researchers in China and Malaysia simulated a new structure for copper zinc tin sulphide (CZTS) cells featuring a tungsten oxide buffer layer and a back surface field kesterite layer. A device simulated with this configuration achieved an open circuit voltage of 1.2 V and a fill factor of 83.37%.

Scientists in China have designed a kesterite-kesterite solar cell with an optimized structure that may potentially achieve efficiencies nearing those of crystalline silicon PV devices. They improved the performance of the two subcells by adjusting band alignment at interfaces, selecting proper buffer layers, and adding a double layer to both devices.

A research team in China combined solar power generation from kesterite thin-film generation with a nickel-cobalt bimetal oxide (NiCoO2) electrochromic window. The proposed prototype not only realizes the function integration of self-power and intelligent solar radiation adjustment, but also extends its function to energy storage.

Scientists in China claim to have gauged the selenization annealing process for kesterite solar cells, in order to achieve a kesterite absorber with low defects. They have developed a device with a certified efficiency of 13.8%.

Chinese researchers fabricated a kesterite PV device using a transparent fluorine-doped tin oxide (FTO) substrate instead of substrates based on opaque Mo-coated soda lime glass. The cell has an open-circuit voltage of 0.522 V, a short-circuit current of 33.0 mA cm−2, and a fill factor of 68.55%.

The solar cell was built with Al2O3-incorporated CZTSSe absorbers using aqueous spray pyrolysis in ambient air. It achieved an open-circuit voltage of 0.469 V, a short-circuit current of 36.96 mA cm2, and a fill factor of 67.25%.

German scientists have designed a manufacturing process to reduce the thickness of the molybdenum diselenide interface layer in kesterite solar cells. They used two different configurations of silicon-oxynitride diffusion-barrier layers.