Japanese scientists have built a chalcopyrite PV device for tandem solar cells and water splitting for hydrogen generation. The device has a power conversion efficiency of 11.05%, an open-circuit voltage of 0.960 V, a short-circuit current density of 15.9 mA cm−2, and a fill factor of 72.4%.
Manufacturers have until Aug. 16 to submit bids to supply 3 million multicrystalline silicon solar cells featuring five busbars, with peak power ratings of 4.68 W and 4.63 W.
Swiss panel manufacturer Meyer Burger wanted to increase the annual capacity of its production lines this year, but the ramp-up has been delayed due to ongoing bottlenecks in global supply chains.
A US-Chinese research group has built a perovskite solar cell with a hole-transporting material (HTM) based on conducting polyaniline (PANI) polymer. The device showed significantly higher efficiency than a reference solar cell relying on an HTM made of commonly used PEDOT:PSS.
The US module level power electronics provider also introduced an installer certification course.
Tongwei was followed by Aiko Solar, Runergy, Solar Space and Jietai Technology. The top five cell manufacturers supplied a total of 59 GW.
Scientists in China evaluated the prospects for various approaches to integrating both solar generation and energy storage in a single device. Their work outlines several ways this could increase the efficiency of solar energy storage, and recommends that future research on this area should focus on integration of materials with the highest specific capacity for energy storage, alongside the dual function of solar energy harvesting.
The new panel from the German manufacturer may also be used as a solar tile and is claimed to be particularly suitable for historical buildings and aesthetically demanding new construction and renovation projects.
Visaka Industries’ patented Atum solar roof is reportedly able to reduce building temperatures by up to 40%.
An international research group has reconstructed the trajectory of p-type wafers in the heterojunction solar cell segment and has identified the lack of knowledge about boron-oxygen related light-induced degradation (BO-LID) as the main cause for the limited adoption of these wafers and the success of their n-type counterparts. According to the scientists, however, there is still big room for improvement for p-type technologies in heterojunction cells.
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